Sayeef Salahuddin

PERSON photo

Sayeef Salahuddin is an associate professor of Electrical Engineering and Computer Sciences at the University of California, Berkeley. His research interests are in the interdisciplinary field of electronic transport in nanostructures currently focusing on novel electronic and spintronic devices for low power logic and memory applications. Salahuddin received a number of awards including the NSF CAREER award, the IEEE Nanotechnology Early Career Award, the Young Investigator Awards from the AFOSR and the ARO and best paper awards from IEEE Transactions on VLSI Systems and from the VLSI-TSA conference. He is on the editorial board of IEEE Electron Devices Letters and currently chairs the Electron Devices Society committee on Nanotechnology.


1. Asif Islam Khan, Korok Chatterjee, Brian Wang, Steven Drapcho, Long You, Claudy Serrao, Saidur Rahman Bakaul, Ramamoorthy Ramesh, and Sayeef Salahuddin. “Negative capacitance in a ferroelectric capacitor,” Nature Materials, 14(2):182–186, 2015.
2. Long You, OukJae Lee, Debanjan Bhowmik, Dominic Labanowski, Jeongmin Hong, Jeffrey Bokor, and Sayeef Salahuddin. “Switching of perpendicularly polarized nano-magnets with spin orbit torque without an external magnetic field by engineering a tilted anisotropy,” Proceedings of National Academy of Sciences, 10.1073/pnas.1507474112, 2015.
3. JT Heron, JL Bosse, Q He, Y Gao, M Trassin, L Ye, JD Clarkson, C Wang, Jian Liu, Sayeef Salahuddin, et al. “Deterministic switching of ferromagnetism at room temperature using an electric field,” Nature, 516(7531):370–373, 2014.
4. X Marti, I Fina, C Frontera, Jian Liu, P Wadley, Qing He, RJ Paull, JD Clarkson, J Kudrnovský, I Turek, J Kuneš, D Yi, JH Chu, CT Nelson, L You, E Arenholz, Sayeef Salahuddin, J Fontcuberta, T Jungwirth, R Ramesh, “Room-temperature antiferromagnetic memory resistor,” Nature Materials, 13(4):367–374, 2014.
5. Debanjan Bhowmik, Long You, and Sayeef Salahuddin, “Spin hall effect clocking of nanomagnetic logic without a magnetic field,” Nature Nanotechnology, 9(1):59–63, 2014.